FDS6298 Series

N-Channel Fast Switching PowerTrench® MOSFET, 30V, 13A, 11.3mΩ

Catalog

N-Channel Fast Switching PowerTrench® MOSFET, 30V, 13A, 11.3mΩ

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
ON Semiconductor FDS6294	Surface Mount	13 A	3 W	14 nC	8-SOIC	3.9 mm	0.154 in	3 V	4.5 V 10 V	20 V	N-Channel	-55 °C	175 ░C	8-SOIC	MOSFET (Metal Oxide)	11.3 mOhm	1205 pF	30 V
ON Semiconductor FDS6294	Surface Mount	13 A	3 W	14 nC	8-SOIC	3.9 mm	0.154 in	3 V	4.5 V 10 V	20 V	N-Channel	-55 °C	175 ░C	8-SOIC	MOSFET (Metal Oxide)	11.3 mOhm	1205 pF	30 V
ON Semiconductor PCF6294W		13 A
ON Semiconductor FDS6298	Surface Mount	13 A	3 W	14 nC	8-SOIC	3.9 mm	0.154 in	3 V	4.5 V 10 V	20 V	N-Channel	-55 °C	150 °C	8-SOIC	MOSFET (Metal Oxide)	9 mOhm	1108 pF	30 V
ON Semiconductor FDS6298	Surface Mount	13 A	3 W	14 nC	8-SOIC	3.9 mm	0.154 in	3 V	4.5 V 10 V	20 V	N-Channel	-55 °C	150 °C	8-SOIC	MOSFET (Metal Oxide)	9 mOhm	1108 pF	30 V

Catalog

N-Channel Fast Switching PowerTrench® MOSFET, 30V, 13A, 11.3mΩ

Key Features

• 13A, 30VRDS(ON)= 11.3 mΩ @ VGS= 10VRDS(ON)= 14.4 mΩ @ VGS= 4.5V

• Low gate charge (10 nC typical)

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.