Discrete Semiconductor Products
STB76NF75
ActiveSTMicroelectronics
N-CHANNEL 75 V, 0.0095 OHM TYP., 80 A STRIPFET(TM) II POWER MOSFET IN D2PAK PACKAGE
Discrete Semiconductor Products
STB76NF75
ActiveSTMicroelectronics
N-CHANNEL 75 V, 0.0095 OHM TYP., 80 A STRIPFET(TM) II POWER MOSFET IN D2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STB76NF75 |
|---|---|
| Drain to Source Voltage (Vdss) | 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) @ Id, Vgs | 11 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB76NF75 Series
This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources