Specification	FDB8832

Current - Continuous Drain (Id) @ 25°C	80 A, 34 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	265 nC
Input Capacitance (Ciss) (Max) @ Vds	11400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDB8832 Series

N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ

Part	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)
ON Semiconductor FDB8832	N-Channel	3 V	11400 pF	MOSFET (Metal Oxide)	4.5 V 10 V	Surface Mount	20 V	300 W	-55 °C	175 ░C	265 nC	1.9 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	34 A 80 A	TO-263 (D2PAK)	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel Logic Level PowerTrench®MOSFET, 30V, 80A, 2.1mΩ

Technical documentation and resources