FDB8832 Series

N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ

Catalog

N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ

Part	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)
ON Semiconductor FDB8832	N-Channel	3 V	11400 pF	MOSFET (Metal Oxide)	4.5 V 10 V	Surface Mount	20 V	300 W	-55 °C	175 ░C	265 nC	1.9 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	34 A 80 A	TO-263 (D2PAK)	30 V

N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ

• Typ rDS(on)= 1.5mΩ at VGS= 5V, ID= 80A

• Typ Qg(5)= 100nC at VGS= 5V

• Low Miller Charge

• Low QrrBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

• RoHS Compliant

N-Channel Logic Level PowerTrench®MOSFET, 30V, 80A, 2.1mΩ