Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | GC9901-S12 |
|---|---|
| Capacitance @ Vr, F | 0.1 pF |
| Diode Type | Schottky - Single |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 2-SMD, Flat Leads |
| Resistance @ If, F | 20 Ohm |
| Voltage - Peak Reverse (Max) [Max] | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 15.34 | |
| 50 | $ 14.71 | |||
| 100 | $ 13.84 | |||
| 250 | $ 13.23 | |||
| 500 | $ 12.72 | |||
| 1000 | $ 12.46 | |||
Description
General part information
GC9900-Schottky-Mixers Series
Schottky barrier devices are available in single beam lead, dual T, ring quad, monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Diodes are available with barrier heights as low as 240mV and up to 625mV per junction. These diodes are suitable for single ended RF mixer, level detectors and phase detectors.
Documents
Technical documentation and resources
No documents available