Specification	SCTH35N65G2V-7

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	18 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	73 nC
Input Capacitance (Ciss) (Max) @ Vds	1370 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max) [Max]	208 W
Rds On (Max) @ Id, Vgs	67 mOhm
Supplier Device Package	H2PAK-7
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	5 V

SCTH35N65G2V-7 Series

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package

Part	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Vgs (Max) [Min]	Power Dissipation (Max) [Max]	Mounting Type	FET Type	Drain to Source Voltage (Vdss)
STMicroelectronics SCTH35N65G2V-7	175 °C	-55 °C	H2PAK-7	5 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	45 A	67 mOhm	20 V	18 V	73 nC	1370 pF	22 V	-10 V	208 W	Surface Mount	N-Channel	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1354	$ 13.06
Newark	Each (Supplied on Cut Tape)	1	$ 18.29
		10	$ 14.07
		25	$ 13.27
		50	$ 12.48
		100	$ 11.71
		250	$ 11.53
		500	$ 11.37

Description

General part information

SCTH35N65G2V-7 Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.