Discrete Semiconductor Products

SIDR622DP-T1-GE3

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MOSFET N-CH 150V 64.6A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 150V 64.6A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIDR622DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	56.7 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	1516 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 125 W
Rds On (Max) @ Id, Vgs	17.7 mOhm
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Package / Case	FET Type	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIDR622DP-T1-GE3	41 nC	17.7 mOhm	56.7 A	Surface Mount	-55 °C	150 °C	PowerPAK® SO-8DC	20 V	PowerPAK® SO-8	N-Channel	4.5 V	MOSFET (Metal Oxide)	1516 pF	10 V	7.5 V	6.25 W 125 W	150 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 56.7A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

Technical documentation and resources