SIDR622 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 150V 64.6A PPAK
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs (Max) | Package / Case | FET Type | Vgs(th) (Max) @ Id | Technology | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 41 nC | 17.7 mOhm | 56.7 A | Surface Mount | -55 °C | 150 °C | PowerPAK® SO-8DC | 20 V | PowerPAK® SO-8 | N-Channel | 4.5 V | MOSFET (Metal Oxide) | 1516 pF | 10 V | 7.5 V | 6.25 W 125 W | 150 V |