FCP165N65S3
NRNDPOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 19 A, 165 MΩ, TO-220
Deep-Dive with AI
Search across all available documentation for this part.
FCP165N65S3
NRNDPOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 19 A, 165 MΩ, TO-220
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FCP165N65S3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 19 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 39 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1500 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 154 W |
| Rds On (Max) @ Id, Vgs | 165 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.83 | |
| 10 | $ 3.21 | |||
| 100 | $ 2.28 | |||
| 500 | $ 1.89 | |||
| 1000 | $ 1.81 | |||
| Newark | Each | 1 | $ 5.11 | |
| 10 | $ 4.48 | |||
| 25 | $ 3.95 | |||
| 50 | $ 3.42 | |||
| 100 | $ 3.23 | |||
| 250 | $ 3.22 | |||
| 500 | $ 2.95 | |||
| ON Semiconductor | N/A | 1 | $ 1.66 | |
Description
General part information
FCP165N65S3R0 Series
SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
Documents
Technical documentation and resources
