FCP165N65S3R0 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FCP165N60E	-55 °C	150 °C	3.5 V	227 W	MOSFET (Metal Oxide)	2434 pF	600 V	23 A	Through Hole	N-Channel	TO-220-3	75 nC	10 V	165 mOhm	TO-220-3	20 V
ON Semiconductor FCP165N65S3R0	-55 °C	150 °C	4.5 V		MOSFET (Metal Oxide)		650 V	19 A	Through Hole	N-Channel	TO-220-3	39 nC	10 V	165 mOhm	TO-220-3	30 V	154 W	1500 pF
ON Semiconductor FCP165N65S3	-55 °C	150 °C	4.5 V		MOSFET (Metal Oxide)		650 V	19 A	Through Hole	N-Channel	TO-220-3	39 nC	10 V	165 mOhm	TO-220-3	30 V	154 W	1500 pF

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220

Key Features

• 700 V @ TJ= 150 °C

• Ultra Low Gate Charge (Typ. Qg= 39 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)

• Internal Gate Resistance: 4.6 Ω

• Optimized Capacitance

• Typ. RDS(on)= 140 mΩ

• 100% Avalanche Tested

• RoHS Compliant

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.