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TO-247-3 AD Long Lead EP
Discrete Semiconductor Products

LSIC2SD065E20CCA

Obsolete
LITTELFUSE

650V/20A SIC SBD TO247-3LAEC-Q101/ TUBE

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TO-247-3 AD Long Lead EP
Discrete Semiconductor Products

LSIC2SD065E20CCA

Obsolete
LITTELFUSE

650V/20A SIC SBD TO247-3LAEC-Q101/ TUBE

Technical Specifications

Parameters and characteristics for this part

SpecificationLSIC2SD065E20CCA
Capacitance @ Vr, F470 pF
Current - Average Rectified (Io)27 A
Current - Reverse Leakage @ Vr50 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-247-3
QualificationAEC-Q101
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackageTO-247AD
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 5.531m+
NewarkEach 250$ 6.251m+
500$ 5.80
TMEN/A 1$ 10.95<1d
5$ 9.85
25$ 8.70
100$ 7.83
450$ 7.29

Description

General part information

LSIC2SD065E20CCA Series

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.