Specification	FDB86366-F085

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	112 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6280 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	176 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDB86366_F085 Series

N-Channel PowerTrench® MOSFET, 80V, 110A, 3.6mΩ

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Grade	Drain to Source Voltage (Vdss)
ON Semiconductor FDB86366-F085	MOSFET (Metal Oxide)	-55 °C	175 ░C	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	112 nC	TO-263 (D2PAK)	N-Channel	176 W	6280 pF	10 V	3.6 mOhm	20 V	4 V	Surface Mount	110 A	Automotive	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.86
		10	$ 2.53
		100	$ 1.78
	Digi-Reel®	1	$ 3.86
		10	$ 2.53
		100	$ 1.78

Description

General part information

FDB86366_F085 Series

Automotive Power MOSFET in a D2PAK package for efficient designs with high thermal performance. Gull-wings leads for an improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.