FDB86366_F085 Series

N-Channel PowerTrench® MOSFET, 80V, 110A, 3.6mΩ

Catalog

N-Channel PowerTrench® MOSFET, 80V, 110A, 3.6mΩ

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Grade	Drain to Source Voltage (Vdss)
ON Semiconductor FDB86366-F085	MOSFET (Metal Oxide)	-55 °C	175 ░C	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	112 nC	TO-263 (D2PAK)	N-Channel	176 W	6280 pF	10 V	3.6 mOhm	20 V	4 V	Surface Mount	110 A	Automotive	80 V

Catalog

N-Channel PowerTrench® MOSFET, 80V, 110A, 3.6mΩ

Key Features

• Low RDS(on)ID= 80 A

• Low Qgand Capacitance

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET in a D2PAK package for efficient designs with high thermal performance. Gull-wings leads for an improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.