Specification	FDP047AN08A0-F102

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	310 W
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

FDP047AN08A0 Series

Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mΩ, TO-220

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
ON Semiconductor FDP047N10	210 nC	100 V	N-Channel	375 W	4.5 V	-55 °C	175 ░C	10 V	MOSFET (Metal Oxide)	120 A	4.7 mOhm	20 V	Through Hole	TO-220-3	15265 pF	TO-220-3
ON Semiconductor FDP047AN08A0-F102		75 V	N-Channel	310 W		-55 °C	175 ░C	6 V 10 V	MOSFET (Metal Oxide)	15 A		20 V	Through Hole	TO-220-3		TO-220-3
ON Semiconductor FDP047N08-F10

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	800	$ 1.77

Description

General part information

FDP047AN08A0 Series

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing