FDP047AN08A0 Series

Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mΩ, TO-220

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
ON Semiconductor FDP047N10	210 nC	100 V	N-Channel	375 W	4.5 V	-55 °C	175 ░C	10 V	MOSFET (Metal Oxide)	120 A	4.7 mOhm	20 V	Through Hole	TO-220-3	15265 pF	TO-220-3
ON Semiconductor FDP047AN08A0-F102		75 V	N-Channel	310 W		-55 °C	175 ░C	6 V 10 V	MOSFET (Metal Oxide)	15 A		20 V	Through Hole	TO-220-3		TO-220-3
ON Semiconductor FDP047N08-F10

Catalog

Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mΩ, TO-220

Key Features

• RDS(on)= 3.9mΩ ( Typ.) @ VGS= 10V, ID= 75A

• Fast switching speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low rDS(on)

• High Power and Current Handling Capability

• RoHS compliant

Description

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.