Specification	FGA30N65SMD

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	90 A
Gate Charge	87 nC
IGBT Type	Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	300 W
Reverse Recovery Time (trr)	35 ns
Supplier Device Package	TO-3PN
Switching Energy	716 µJ, 208 µJ
Td (on/off) @ 25°C	102 ns
Td (on/off) @ 25°C	14 ns
Test Condition	400 V, 30 A, 6 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max)	650 V

FGA30N65SMD Series

IGBT, 650V, 30A, Field Stop

Part	Power - Max [Max]	Test Condition	Switching Energy	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Gate Charge	Supplier Device Package	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	IGBT Type
ON Semiconductor FGA30N65SMD	300 W	6 Ohm 15 V 30 A 400 V	208 µJ 716 µJ	35 ns	650 V	60 A	87 nC	TO-3PN	102 ns	14 ns	2.5 V	90 A	Through Hole	-55 °C	175 ░C	SC-65-3 TO-3P-3	Field Stop
ON Semiconductor FGA30N65SMD	300 W	6 Ohm 15 V 30 A 400 V	208 µJ 716 µJ	35 ns	650 V	60 A	87 nC	TO-3PN	102 ns	14 ns	2.5 V	90 A	Through Hole	-55 °C	175 ░C	SC-65-3 TO-3P-3	Field Stop

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	143	$ 2.11
		143	$ 2.11

Description

General part information

FGA30N65SMD Series

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.