FGA30N65SMD Series

IGBT, 650V, 30A, Field Stop

Catalog

IGBT, 650V, 30A, Field Stop

Part	Power - Max [Max]	Test Condition	Switching Energy	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Gate Charge	Supplier Device Package	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	IGBT Type
ON Semiconductor FGA30N65SMD	300 W	6 Ohm 15 V 30 A 400 V	208 µJ 716 µJ	35 ns	650 V	60 A	87 nC	TO-3PN	102 ns	14 ns	2.5 V	90 A	Through Hole	-55 °C	175 ░C	SC-65-3 TO-3P-3	Field Stop
ON Semiconductor FGA30N65SMD	300 W	6 Ohm 15 V 30 A 400 V	208 µJ 716 µJ	35 ns	650 V	60 A	87 nC	TO-3PN	102 ns	14 ns	2.5 V	90 A	Through Hole	-55 °C	175 ░C	SC-65-3 TO-3P-3	Field Stop

Catalog

IGBT, 650V, 30A, Field Stop

Key Features

• Maximum Junction Temperature : TJ=175oC

• Positive Temperature Co-efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat)=1.98 V(Typ.) @ IC= 30 A

• Fast Switching

• Tighten Parameter Distribution

• RoHS Compliant

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2ndgeneration IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.