Discrete Semiconductor Products
GAN080-650EBEZ
ActiveFreescale Semiconductor - NXP
650 V, 80 MOHM GALLIUM NITRIDE (GAN) FET IN A DFN 8 MM X 8 MM PACKAGE
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Search across all available documentation for this part.
Discrete Semiconductor Products
GAN080-650EBEZ
ActiveFreescale Semiconductor - NXP
650 V, 80 MOHM GALLIUM NITRIDE (GAN) FET IN A DFN 8 MM X 8 MM PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | GAN080-650EBEZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 29 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-VDFN Exposed Pad |
| Power Dissipation (Max) | 240 W |
| Rds On (Max) @ Id, Vgs | 80 mOhm |
| Supplier Device Package | DFN8080-8 |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) [Max] | 7 V |
| Vgs (Max) [Min] | -6 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 7.55 | |
| 10 | $ 7.01 | |||
| 100 | $ 6.11 | |||
| 500 | $ 5.39 | |||
| Digi-Reel® | 1 | $ 7.55 | ||
| 10 | $ 7.01 | |||
| 100 | $ 6.11 | |||
| 500 | $ 5.39 | |||
| Tape & Reel (TR) | 2500 | $ 3.27 | ||
Description
General part information
GAN080-650EBE Series
The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance.
Documents
Technical documentation and resources