GAN080-650EBE Series

650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

Manufacturer: Freescale Semiconductor - NXP

Catalog

650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

Part	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max) [Min]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP GAN080-650EBEZ	240 W	N-Channel	80 mOhm	6 V	DFN8080-8	-6 V	7 V	650 V	Surface Mount Wettable Flank	GaNFET (Gallium Nitride)	29 A	2.5 V	8-VDFN Exposed Pad	6.2 nC	225 pF	-55 °C	150 °C

Catalog

650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

Description

The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance.