Discrete Semiconductor Products
STGWA60V60DF
ActiveSTMicroelectronics
600 V, 60 A VERY HIGH SPEED TRENCH GATE FIELD-STOP IGBT
Discrete Semiconductor Products
STGWA60V60DF
ActiveSTMicroelectronics
600 V, 60 A VERY HIGH SPEED TRENCH GATE FIELD-STOP IGBT
Technical Specifications
Parameters and characteristics for this part
| Specification | STGWA60V60DF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 240 A |
| Gate Charge | 334 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 375 W |
| Reverse Recovery Time (trr) | 74 ns |
| Supplier Device Package | TO-247 Long Leads |
| Switching Energy | 750 µJ, 550 µJ |
| Td (on/off) @ 25°C | 60 ns, 208 ns |
| Test Condition | 4.7 Ohm, 60 A, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 683 | $ 4.70 | |
| Tube | 1 | $ 3.91 | ||
| 30 | $ 3.10 | |||
| 120 | $ 2.66 | |||
| 510 | $ 2.36 | |||
| 1020 | $ 2.02 | |||
| 2010 | $ 1.90 | |||
| 5010 | $ 1.83 | |||
Description
General part information
STGWA60 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.