Discrete Semiconductor Products

SI4816BDY-T1-GE3

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MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4816BDY-T1-GE3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	5.8 A, 8.2 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.25 W
Power - Max [Min]	1 W
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Configuration	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Supplier Device Package	Power - Max [Min]	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI4816BDY-T1-GE3	10 nC	Surface Mount	2 N-Channel (Half Bridge)	MOSFET (Metal Oxide)	5.8 A 8.2 A	-55 °C	150 °C	Logic Level Gate	3 V	8-SOIC	3.9 mm	0.154 in	30 V	8-SOIC	1 W	1.25 W
Vishay General Semiconductor - Diodes Division SI4816DY-T1-E3		Surface Mount	2 N-Channel (Half Bridge)	MOSFET (Metal Oxide)	5.3 A 7.7 A	-55 °C	150 °C	Logic Level Gate	2 V	8-SOIC	3.9 mm	0.154 in	30 V	8-SOIC	1 W	1.25 W	5 V 12 nC	22 mOhm

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General part information

Mosfet Array 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SOIC

Technical documentation and resources