SI4816 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Configuration | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Supplier Device Package | Power - Max [Min] | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 10 nC | Surface Mount | 2 N-Channel (Half Bridge) | MOSFET (Metal Oxide) | 5.8 A 8.2 A | -55 °C | 150 °C | Logic Level Gate | 3 V | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 8-SOIC | 1 W | 1.25 W | ||
Vishay General Semiconductor - Diodes Division | Surface Mount | 2 N-Channel (Half Bridge) | MOSFET (Metal Oxide) | 5.3 A 7.7 A | -55 °C | 150 °C | Logic Level Gate | 2 V | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 8-SOIC | 1 W | 1.25 W | 5 V 12 nC | 22 mOhm |