Discrete Semiconductor Products

G170P03S2

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MOSFET P+P-CH 30V 11A SOP-8 DUAL

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Discrete Semiconductor Products

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MOSFET P+P-CH 30V 11A SOP-8 DUAL

Technical Specifications

Parameters and characteristics for this part

Specification	G170P03S2

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	9 A, 11 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	18 nC, 40 nC
Input Capacitance (Ciss) (Max)	1786 pF, 1786 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C, 150 °C
Operating Temperature (Min)	-55 °C, -55 °C
Package Length	0.154 in
Package Name	8-SOIC, 8-SOP
Package Width	3.9 mm
Power - Max (Tc)	1.4 W
Rds On (Max)	18 mOhm, 25 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

Part	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Max)	Operating Temperature (Min)	Vgs(th) (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Mounting Type	Technology	Power - Max (Tc)	Channel Count	Configuration	Configuration - Features	Package Length	Package Name	Package Width	Drain to Source Voltage (Vdss)
Goford Semiconductor G170P03S2	9 A 11 A	150 °C 150 °C	-55 °C -55 °C	2.5 V	18 nC 40 nC	1786 pF 1786 pF	18 mOhm 25 mOhm	Surface Mount	MOSFET (Metal Oxide)	1.4 W	2	P-Channel	Dual	0.154 in	8-SOIC 8-SOP	3.9 mm	30 V

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