Discrete Semiconductor Products

G170P03S2

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MOSFET P+P-CH 30V 11A SOP-8 DUAL

Discrete Semiconductor Products

Active

MOSFET P+P-CH 30V 11A SOP-8 DUAL

Technical Specifications

Parameters and characteristics for this part

Specification	G170P03S2

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	11 A, 9 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	40 nC, 18 nC
Input Capacitance (Ciss) (Max)	1786 pF, 1786 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C, 150 °C
Operating Temperature (Min)	-55 °C, -55 °C
Package Length	0.154 in
Package Name	8-SOP, 8-SOIC
Package Width	3.9 mm
Power - Max (Tc)	1.4 W
Rds On (Max)	25 mOhm, 18 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Package Name	Rds On (Max)	Drain to Source Voltage (Vdss)	Package Length	Package Width	Channel Count	Configuration	Configuration - Features	Power - Max (Tc)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Technology	Mounting Type	Vgs(th) (Max)
Goford Semiconductor G170P03S2	-55 °C -55 °C	150 °C 150 °C	9 A 11 A	8-SOIC 8-SOP	18 mOhm 25 mOhm	30 V	0.154 in	3.9 mm	2	P-Channel	Dual	1.4 W	1786 pF 1786 pF	18 nC 40 nC	MOSFET (Metal Oxide)	Surface Mount	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Mosfet Array 30V 11A (Tc) Surface Mount 8-SOP

Technical documentation and resources