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FDT86106LZ
Discrete Semiconductor Products

NDT014

Active
ON Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.7A I(D),SOT-223 ROHS COMPLIANT: YES

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FDT86106LZ
Discrete Semiconductor Products

NDT014

Active
ON Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.7A I(D),SOT-223 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNDT014
Current - Continuous Drain (Id) @ 25°C2.7 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]11 nC
Input Capacitance (Ciss) (Max) @ Vds155 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max) [Max]3 W
Rds On (Max) @ Id, Vgs200 mOhm
Supplier Device PackageSOT-223-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.52
10$ 0.96
100$ 0.64
500$ 0.50
1000$ 0.46
2000$ 0.42
Digi-Reel® 1$ 1.52
10$ 0.96
100$ 0.64
500$ 0.50
1000$ 0.46
2000$ 0.42
Tape & Reel (TR) 4000$ 0.39
8000$ 0.37
NewarkEach (Supplied on Full Reel) 3000$ 0.50
6000$ 0.46
12000$ 0.43
18000$ 0.40
30000$ 0.38
ON SemiconductorN/A 1$ 0.40

Description

General part information

NDT014 Series

Power SOT N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.