PSMN2R0-25MLDX
ActiveN-CHANNEL 25 V, 2.1 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY
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PSMN2R0-25MLDX
ActiveN-CHANNEL 25 V, 2.1 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY
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Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN2R0-25MLDX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Feature | Schottky Diode (Body) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2490 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) [Max] | 74 W |
| Rds On (Max) @ Id, Vgs [Max] | 2.27 mOhm |
| Supplier Device Package | LFPAK33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.79 | |
| 10 | $ 0.65 | |||
| 100 | $ 0.50 | |||
| 500 | $ 0.43 | |||
| Digi-Reel® | 1 | $ 0.79 | ||
| 10 | $ 0.65 | |||
| 100 | $ 0.50 | |||
| 500 | $ 0.43 | |||
| Tape & Reel (TR) | 1500 | $ 0.42 | ||
Description
General part information
PSMN2R0-25MLD Series
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Documents
Technical documentation and resources