PSMN2R0-25MLD Series

N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Manufacturer: Freescale Semiconductor - NXP

Catalog

N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Part	FET Type	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Vgs (Max)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PSMN2R0-25MLDX	N-Channel	Schottky Diode (Body)	2490 pF	-55 °C	175 ░C	MOSFET (Metal Oxide)	2.27 mOhm	Surface Mount	20 V	74 W	25 V	34.4 nC	2.2 V	LFPAK33	70 A	4.5 V 10 V

Catalog

N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.