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Discrete Semiconductor Products

1N5417-1/TR

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 200V, 3A, 150NS B-BODY T/R

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Discrete Semiconductor Products

1N5417-1/TR

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 200V, 3A, 150NS B-BODY T/R

Technical Specifications

Parameters and characteristics for this part

Specification1N5417-1/TR
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr1 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseAxial
Reverse Recovery Time (trr)150 ns
Speed200 mA, 500 ns
Supplier Device PackageB
TechnologyStandard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 188$ 4.36
Microchip DirectN/A 1$ 4.69
NewarkEach (Supplied on Full Reel) 100$ 4.36
500$ 4.19

Description

General part information

1N5417-1-TR-Rectifier Series

This "fast recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal "Category 1" metallurgical bond. These devices are also available in surface mount MELF package configurations. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.