Discrete Semiconductor Products

PSMN8R0-40BS,118

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PSMN8R0-40BS - N-CHANNEL 40 V 7.6 MΩ STANDARD LEVEL MOSFET IN D2PAK@EN-US D2PAK 3-PIN

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Discrete Semiconductor Products

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PSMN8R0-40BS - N-CHANNEL 40 V 7.6 MΩ STANDARD LEVEL MOSFET IN D2PAK@EN-US D2PAK 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN8R0-40BS,118

Current - Continuous Drain (Id) @ 25°C	77 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	1262 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	86 W
Rds On (Max) @ Id, Vgs	7.6 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Package / Case	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Freescale Semiconductor - NXP PSMN8R0-40HLX	-55 °C	175 ░C	2 N-Channel (Dual)	Surface Mount	2110 pF	Logic Level Gate	LFPAK56D	MOSFET (Metal Oxide)	40 V	8-LFPAK56 SOT-1205	53 W	15.7 nC	2.1 V	30 A
Freescale Semiconductor - NXP PSMN8R0-40BS,118	-55 °C	175 ░C		Surface Mount			D2PAK	MOSFET (Metal Oxide)	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		21 nC		77 A	7.6 mOhm	N-Channel	20 V	86 W	10 V	1262 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 77A (Tc) 86W (Tc) Surface Mount D2PAK

Technical documentation and resources