PSMN8R0-40HLX

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MOSFET 2N-CH 40V 30A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 30A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN8R0-40HLX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	15.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	53 W
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Package / Case	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Freescale Semiconductor - NXP PSMN8R0-40HLX	-55 °C	175 ░C	2 N-Channel (Dual)	Surface Mount	2110 pF	Logic Level Gate	LFPAK56D	MOSFET (Metal Oxide)	40 V	8-LFPAK56 SOT-1205	53 W	15.7 nC	2.1 V	30 A
Freescale Semiconductor - NXP PSMN8R0-40BS,118	-55 °C	175 ░C		Surface Mount			D2PAK	MOSFET (Metal Oxide)	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		21 nC		77 A	7.6 mOhm	N-Channel	20 V	86 W	10 V	1262 pF

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General part information

Mosfet Array 40V 30A (Ta) 53W (Ta) Surface Mount LFPAK56D

Technical documentation and resources