Discrete Semiconductor Products

VS-80EBU02

Obsolete

DIODE GEN PURP 200V 80A POWIRTAB

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 200V 80A POWIRTAB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-80EBU02

Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Chassis Mount
Package / Case	PowIRtab™, PowerTab™
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	PowIRtab™
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.13 V

Part	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Voltage - Forward (Vf) (Max) @ If	Grade	Package / Case	Mounting Type	Technology	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Speed
Vishay General Semiconductor - Diodes Division VS-80EBU02HF4	200 mA 500 ns	200 V	AEC-Q101	1.1 V	Automotive	PowerTab®	Chassis Mount	Standard	50 µA	40 ns	175 ░C	-55 C	PowerTab®	80 A
Vishay General Semiconductor - Diodes Division VS-80EBU02	200 mA	200 V		1.13 V		PowerTab™ PowIRtab™	Chassis Mount	Standard	50 µA				PowIRtab™	80 A	Standard Recovery >500ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 5.09

General part information

Diode 200 V 80A Chassis Mount PowIRtab™

Technical documentation and resources