Discrete Semiconductor Products

VS-80EBU02HF4

Obsolete

DIODE GEN PURP 200V 80A POWERTAB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 200V 80A POWERTAB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-80EBU02HF4

Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	50 µA
Grade	Automotive
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	PowerTab®
Qualification	AEC-Q101
Reverse Recovery Time (trr)	40 ns
Speed	200 mA, 500 ns
Supplier Device Package	PowerTab®
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Voltage - Forward (Vf) (Max) @ If	Grade	Package / Case	Mounting Type	Technology	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Speed
Vishay General Semiconductor - Diodes Division VS-80EBU02HF4	200 mA 500 ns	200 V	AEC-Q101	1.1 V	Automotive	PowerTab®	Chassis Mount	Standard	50 µA	40 ns	175 ░C	-55 C	PowerTab®	80 A
Vishay General Semiconductor - Diodes Division VS-80EBU02	200 mA	200 V		1.13 V		PowerTab™ PowIRtab™	Chassis Mount	Standard	50 µA				PowIRtab™	80 A	Standard Recovery >500ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 80A Chassis Mount PowerTab®

Technical documentation and resources

No documents available