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STPSC20065W

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STMicroelectronics

650 V POWER SCHOTTKY SILICON CARBIDE DIODE

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DocumentsSTPSC20065W | Datasheet +10

Discrete Semiconductor Products

STPSC20065W

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STMicroelectronics

650 V POWER SCHOTTKY SILICON CARBIDE DIODE

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DocumentsSTPSC20065W | Datasheet +10

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Technical Specifications

Parameters and characteristics for this part

Specification	STPSC20065W

Capacitance @ Vr, F	1250 pF
Current - Reverse Leakage @ Vr	300 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-247-2 (Straight Leads)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DO-247
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.45 V

STPSC20065 Series

650 V, dual 10 A, power Schottky silicon carbide diode

Part	Mounting Type	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Qualification	Capacitance @ Vr, F	Grade	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)
STMicroelectronics STPSC20065WY	Through Hole	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	300 µA	1.45 V	650 V	DO-247-2 (Straight Leads)	500 mA	AEC-Q101	1250 pF	Automotive	DO-247
STMicroelectronics STPSC20065CWL	Through Hole	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	130 µA		650 V	TO-247-3	500 mA		670 pF		TO-247 Long Leads	1.45 V	10 A
STMicroelectronics STPSC20065W	Through Hole	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	300 µA	1.45 V	650 V	DO-247-2 (Straight Leads)	500 mA		1250 pF		DO-247
STMicroelectronics STPSC20065D	Through Hole	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	300 µA	1.45 V	650 V	TO-220-2	500 mA		1250 pF		TO-220AC
STMicroelectronics STPSC20065DI	Through Hole	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	300 µA	1.45 V	650 V		500 mA		1250 pF		TO-220AC ins
STMicroelectronics STPSC20065DY	Through Hole	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	150 µA	1.45 V	650 V	TO-220-2	500 mA	AEC-Q101	1250 pF	Automotive	TO-220AC
STMicroelectronics STPSC20065GY-TR	Surface Mount	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	150 µA	1.45 V	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	500 mA	AEC-Q101	1250 pF	Automotive	D2PAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	90	$ 6.24

Description

General part information

STPSC20065 Series

The STPSC20065C is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

STPSC20065W

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STPSC20065W

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Technical Specifications

STPSC20065 Series

Pricing

Description

STPSC20065 Series

Documents

STPSC20065W | Datasheet

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AN4242

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AN5088

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STPSC20065 Series