Discrete Semiconductor Products

PN5138

Obsolete

TRANS PNP 30V 0.5A TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PNP 30V 0.5A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	PN5138

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Mounting Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor PN5138_D26Z	Through Hole	625 mW	300 mV	500 mA	50 nA	-55 °C	150 °C	30 V	TO-92-3	TO-226-3 TO-92-3	50 hFE	PNP
ON Semiconductor PN5133	Through Hole	625 mW	400 mV						TO-92S	TO-226-3 TO-92-3 Short Body	60	NPN	18 V
ON Semiconductor PN5135	Through Hole	625 mW	1 V	200 mA	300 nA				TO-92-3	TO-226-3 TO-92-3	50 hFE	NPN	25 V	150 °C
ON Semiconductor PN5138	Through Hole	625 mW	300 mV	500 mA	50 nA	-55 °C	150 °C	30 V	TO-92-3	TO-226-3 TO-92-3	50 hFE	PNP
ON Semiconductor PN5138	Through Hole	625 mW	300 mV	500 mA	50 nA	-55 °C	150 °C	30 V	TO-92-3	TO-226-3 TO-92-3	50 hFE	PNP
ON Semiconductor PN5139	Through Hole	625 mW	150 mV	100 mA	50 nA				TO-92S	TO-226-3 TO-92-3 Short Body		PNP	20 V		40 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 30 V 500 mA 625 mW Through Hole TO-92-3

Technical documentation and resources