Discrete Semiconductor Products

PN5133

Obsolete

TRANS NPN 18V TO92S

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 18V TO92S

Technical Specifications

Parameters and characteristics for this part

Specification	PN5133

DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Short Body
Power - Max [Max]	625 mW
Supplier Device Package	TO-92S
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	18 V

Part	Mounting Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor PN5138_D26Z	Through Hole	625 mW	300 mV	500 mA	50 nA	-55 °C	150 °C	30 V	TO-92-3	TO-226-3 TO-92-3	50 hFE	PNP
ON Semiconductor PN5133	Through Hole	625 mW	400 mV						TO-92S	TO-226-3 TO-92-3 Short Body	60	NPN	18 V
ON Semiconductor PN5135	Through Hole	625 mW	1 V	200 mA	300 nA				TO-92-3	TO-226-3 TO-92-3	50 hFE	NPN	25 V	150 °C
ON Semiconductor PN5138	Through Hole	625 mW	300 mV	500 mA	50 nA	-55 °C	150 °C	30 V	TO-92-3	TO-226-3 TO-92-3	50 hFE	PNP
ON Semiconductor PN5138	Through Hole	625 mW	300 mV	500 mA	50 nA	-55 °C	150 °C	30 V	TO-92-3	TO-226-3 TO-92-3	50 hFE	PNP
ON Semiconductor PN5139	Through Hole	625 mW	150 mV	100 mA	50 nA				TO-92S	TO-226-3 TO-92-3 Short Body		PNP	20 V		40 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 18 V 625 mW Through Hole TO-92S

Technical documentation and resources