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8-VDFN
Integrated Circuits (ICs)

TC4452VMF

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Microchip Technology

MOSFET DRVR 13A 1-OUT LO SIDE NON-INV 8-PIN DFN-S EP TUBE

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8-VDFN
Integrated Circuits (ICs)

TC4452VMF

Active
Microchip Technology

MOSFET DRVR 13A 1-OUT LO SIDE NON-INV 8-PIN DFN-S EP TUBE

Technical Specifications

Parameters and characteristics for this part

SpecificationTC4452VMF
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]13 A
Current - Peak Output (Source, Sink) [custom]13 A
Driven ConfigurationLow-Side
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case8-VDFN Exposed Pad
Rise / Fall Time (Typ) [custom]32 ns
Rise / Fall Time (Typ) [custom]30 ns
Supplier Device Package8-DFN-S (6x5)
Voltage - Supply [Max]18 V
Voltage - Supply [Min]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.96
25$ 2.46
100$ 2.24
Microchip DirectTUBE 1$ 2.96
25$ 2.46
100$ 2.24
1000$ 2.16
5000$ 2.14

Description

General part information

TC4452 Series

The TC4451/52 are single-output MOSFET gate drivers, which are high-current buffer/gate drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transistors (IGBT). Their high drive current of over 13 A is capable of driving some of largest power transistors in use today. The TC4451/2 have matched leading and falling-edge propagation delay times and have very low cross-conduction current to minimize the overall power dissipation of the device. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, more than 1.5 A of reverse current (of either polarity) being forced back into their outputs. Additionally, all terminals are fully protected against up to 4 kV of electrostatic discharge.