Discrete Semiconductor Products

NTLJF4156NTAG

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POWER MOSFET, N CHANNEL, 30 V, 3.7 A, 0.047 OHM, WDFN, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 30 V, 3.7 A, 0.047 OHM, WDFN, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NTLJF4156NTAG

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.5 nC
Input Capacitance (Ciss) (Max) @ Vds	427 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	710 mW
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	6-WDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Single N-Channel Power MOSFET and Schottky Diode 30V 4.6A 70mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
ON Semiconductor NTLJF4156NTAG	1.5 V 4.5 V	MOSFET (Metal Oxide)	1 V	30 V	710 mW	6.5 nC	N-Channel	6-WDFN (2x2)	Surface Mount	-55 °C	150 °C	70 mOhm	Schottky Diode (Isolated)	427 pF	8 V

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General part information

Power MOSFET and Schottky Diode30 V, 4.6 A, µCool™ N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mmWDFN Package