NTLJF4156N Series

Single N-Channel Power MOSFET and Schottky Diode 30V 4.6A 70mΩ

Catalog

Single N-Channel Power MOSFET and Schottky Diode 30V 4.6A 70mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
ON Semiconductor NTLJF4156NTAG	1.5 V 4.5 V	MOSFET (Metal Oxide)	1 V	30 V	710 mW	6.5 nC	N-Channel	6-WDFN (2x2)	Surface Mount	-55 °C	150 °C	70 mOhm	Schottky Diode (Isolated)	427 pF	8 V

Single N-Channel Power MOSFET and Schottky Diode 30V 4.6A 70mΩ

• WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction

• Co-Packaged MOSFET and Schottky For Easy Circuit Layout

• RDS(on)Rated at Low VGS=1.5 V

• Low Profile (< 0.8mm) for Easy Fit in Thin Environments

• Low VF Schottky

Power MOSFET and Schottky Diode30 V, 4.6 A, µCool™ N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mmWDFN Package