Discrete Semiconductor Products
SCT3105KLHRC11
ActiveRohm Semiconductor
1200V, 24A, THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE
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Discrete Semiconductor Products
SCT3105KLHRC11
ActiveRohm Semiconductor
1200V, 24A, THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3105KLHRC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 51 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 574 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 134 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 137 mOhm |
| Supplier Device Package | TO-247N |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT3105 Series
SCT3105KR is anSiC MOSFETthat features a trench gate structure optimized forelectric vehicle charging stations,solar power inverters, and server power supplies requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
Documents
Technical documentation and resources
