Specification	NVMFWS005N10MCLT1G

Current - Continuous Drain (Id) @ 25°C	18.4 A, 108 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	4100 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	3.8 W, 131 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	5.1 mOhm
Supplier Device Package	4.9x5.9, 8-SOFL-WF, 5-DFNW
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NVMFS005N10MCL Series

MOSFET - Power, Single, N-Channel 100 V, 5.1 mΩ, 108A

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Qualification	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Grade
ON Semiconductor NVMFWS005N10MCLT1G	100 V	55 nC	18.4 A 108 A	Surface Mount Wettable Flank	N-Channel	AEC-Q101	3.8 W 131 W	4100 pF	-55 °C	175 ░C	4.5 V 10 V	8-PowerTDFN 5 Leads	4.9x5.9 5-DFNW 8-SOFL-WF	5.1 mOhm	3 V	MOSFET (Metal Oxide)	20 V	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET - Power, Single, N-Channel 100 V, 5.1 mΩ, 108A

Technical documentation and resources