MOSFET - Power, Single, N-Channel 100 V, 5.1 mΩ, 108A
MOSFET - Power, Single, N-Channel 100 V, 5.1 mΩ, 108A
MOSFET - Power, Single, N-Channel 100 V, 5.1 mΩ, 108A
| Part | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Type | Qualification | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Vgs (Max) | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 100 V | 55 nC | 18.4 A 108 A | Surface Mount Wettable Flank | N-Channel | AEC-Q101 | 3.8 W 131 W | 4100 pF | -55 °C | 175 ░C | 4.5 V 10 V | 8-PowerTDFN 5 Leads | 4.9x5.9 5-DFNW 8-SOFL-WF | 5.1 mOhm | 3 V | MOSFET (Metal Oxide) | 20 V | Automotive |