Discrete Semiconductor Products

FQD12N20LTM-F085

Obsolete

ON Semiconductor

MOSFET N-CH 200V 9A DPAK

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

FQD12N20LTM-F085

Obsolete

ON Semiconductor

MOSFET N-CH 200V 9A DPAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQD12N20LTM-F085

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1080 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	55 W, 2.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

FQD12N20L Series

Power MOSFET, N-Channel, Logic Level, QFET<sup>®</sup>, 200 V, 9.0 A, 280 mΩ, DPAK

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Qualification	Grade	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQD12N20LTM	N-Channel	1080 pF	20 V	2 V	TO-252AA	-55 °C	150 °C	MOSFET (Metal Oxide)	9 A	10 V	5 V	Surface Mount	280 mOhm	200 V	2.5 W 55 W	DPAK (2 Leads + Tab) SC-63 TO-252-3
ON Semiconductor FQD12N20LTM-F085	N-Channel	1080 pF	20 V	2 V	TO-252AA	-55 °C	150 °C	MOSFET (Metal Oxide)	9 A	10 V	5 V	Surface Mount	280 mOhm	200 V	2.5 W 55 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	Automotive
ON Semiconductor FQD12N20TM	N-Channel	910 pF	30 V	5 V	TO-252AA	-55 °C	150 °C	MOSFET (Metal Oxide)	9 A			Surface Mount	280 mOhm	200 V	2.5 W 55 W	DPAK (2 Leads + Tab) SC-63 TO-252-3			10 V	23 nC
ON Semiconductor FQD12N20LTM-F085P	N-Channel	1080 pF	20 V	2 V	TO-252AA	-55 °C	150 °C	MOSFET (Metal Oxide)	9 A	10 V	5 V	Surface Mount	280 mOhm	200 V	2.5 W 55 W	DPAK (2 Leads + Tab) SC-63 TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 0.51
		5000	$ 0.47
		7500	$ 0.46

Description

General part information

FQD12N20L Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Documents

Technical documentation and resources