FQD12N20L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Qualification	Grade	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQD12N20LTM	N-Channel	1080 pF	20 V	2 V	TO-252AA	-55 °C	150 °C	MOSFET (Metal Oxide)	9 A	10 V	5 V	Surface Mount	280 mOhm	200 V	2.5 W 55 W	DPAK (2 Leads + Tab) SC-63 TO-252-3
ON Semiconductor FQD12N20LTM-F085	N-Channel	1080 pF	20 V	2 V	TO-252AA	-55 °C	150 °C	MOSFET (Metal Oxide)	9 A	10 V	5 V	Surface Mount	280 mOhm	200 V	2.5 W 55 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	Automotive
ON Semiconductor FQD12N20TM	N-Channel	910 pF	30 V	5 V	TO-252AA	-55 °C	150 °C	MOSFET (Metal Oxide)	9 A			Surface Mount	280 mOhm	200 V	2.5 W 55 W	DPAK (2 Leads + Tab) SC-63 TO-252-3			10 V	23 nC
ON Semiconductor FQD12N20LTM-F085P	N-Channel	1080 pF	20 V	2 V	TO-252AA	-55 °C	150 °C	MOSFET (Metal Oxide)	9 A	10 V	5 V	Surface Mount	280 mOhm	200 V	2.5 W 55 W	DPAK (2 Leads + Tab) SC-63 TO-252-3

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK

Key Features

• 9A, 200V, RDS(on)= 280mΩ(Max.) @VGS= 10 V, ID= 4.5A

• Low gate charge ( Typ. 16nC)

• Low Crss( Typ. 17pF)

• 100% avalanche tested

• Low level gate drive requirement allowing direct oprationfrom logic drivers

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.