Discrete Semiconductor Products

SIHU7N60E-GE3

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MOSFET N-CH 600V 7A IPAK

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Discrete Semiconductor Products

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MOSFET N-CH 600V 7A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHU7N60E-GE3

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	680 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	78 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Power Dissipation (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIHU7N60E-GE3	N-Channel	78 W	MOSFET (Metal Oxide)	-55 °C	150 °C	7 A	40 nC	680 pF	IPAK TO-251-3 Short Leads TO-251AA	10 V	Through Hole	TO-251AA	600 mOhm	30 V	600 V	4 V

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General part information

N-Channel 600 V 7A (Tc) 78W (Tc) Through Hole TO-251AA

Technical documentation and resources