SIHU7 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 7A IPAK
| Part | FET Type | Power Dissipation (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | N-Channel | 78 W | MOSFET (Metal Oxide) | -55 °C | 150 °C | 7 A | 40 nC | 680 pF | IPAK TO-251-3 Short Leads TO-251AA | 10 V | Through Hole | TO-251AA | 600 mOhm | 30 V | 600 V | 4 V |