Discrete Semiconductor Products

SI1988DH-T1-E3

Obsolete

MOSFET 2N-CH 20V 1.3A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 20V 1.3A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1988DH-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1.3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	4.1 nC
Input Capacitance (Ciss) (Max) @ Vds	110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	168 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Feature	Power - Max [Max]
Vishay General Semiconductor - Diodes Division SI1988DH-T1-E3	168 mOhm	1.3 A	6-TSSOP SC-88 SOT-363	-55 °C	150 °C	2 N-Channel (Dual)	Surface Mount	MOSFET (Metal Oxide)	4.1 nC	SC-70-6	20 V	110 pF	1 V	Logic Level Gate	1.25 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 1.3A 1.25W Surface Mount SC-70-6

Technical documentation and resources

No documents available