SI1988 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET 2N-CH 20V 1.3A SC70-6
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Configuration | Mounting Type | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | FET Feature | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 168 mOhm | 1.3 A | 6-TSSOP SC-88 SOT-363 | -55 °C | 150 °C | 2 N-Channel (Dual) | Surface Mount | MOSFET (Metal Oxide) | 4.1 nC | SC-70-6 | 20 V | 110 pF | 1 V | Logic Level Gate | 1.25 W |