Specification	FDMS7580

Current - Continuous Drain (Id) @ 25°C	29 A, 15 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	27 W, 2.5 W
Rds On (Max) @ Id, Vgs [Max]	7.5 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS7580 Series

N-Channel Power Trench® MOSFET 25V, 7.5mΩ

Part	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [x]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
ON Semiconductor FDMS7580	7.5 mOhm	20 V	25 V	15 A 29 A	4.5 V 10 V	8-PQFN (5x6)	Surface Mount	3 V	2.5 W 27 W	1190 pF	MOSFET (Metal Oxide)	20 nC	8-PowerTDFN	-55 °C	150 °C	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	404	$ 0.74

Description

General part information

FDMS7580 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.