FDMS7580 Series

N-Channel Power Trench® MOSFET 25V, 7.5mΩ

Catalog

N-Channel Power Trench® MOSFET 25V, 7.5mΩ

Part	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [x]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
ON Semiconductor FDMS7580	7.5 mOhm	20 V	25 V	15 A 29 A	4.5 V 10 V	8-PQFN (5x6)	Surface Mount	3 V	2.5 W 27 W	1190 pF	MOSFET (Metal Oxide)	20 nC	8-PowerTDFN	-55 °C	150 °C	N-Channel

Catalog

N-Channel Power Trench® MOSFET 25V, 7.5mΩ

Key Features

• Max rDS(on)= 7.5 mΩ at VGS= 10 V, ID= 15 A

• Max rDS(on)= 11.1 mΩ at VGS= 4.5 V, ID= 12 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• Next generation enhanced body diode technology, engineered for soft recovery

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.