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Discrete Semiconductor Products

CSD17571Q2

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Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 29 MOHM

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WSON (DQK)
Discrete Semiconductor Products

CSD17571Q2

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 29 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17571Q2
Current - Continuous Drain (Id) @ 25°C22 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]3.1 nC
Input Capacitance (Ciss) (Max) @ Vds468 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)2.5 W
Rds On (Max) @ Id, Vgs29 mOhm
Supplier Device Package6-SON (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.34
10$ 0.29
100$ 0.20
500$ 0.16
1000$ 0.14
Digi-Reel® 1$ 0.34
10$ 0.29
100$ 0.20
500$ 0.16
1000$ 0.14
Tape & Reel (TR) 3000$ 0.14
Texas InstrumentsLARGE T&R 1$ 0.23
100$ 0.16
250$ 0.12
1000$ 0.08

Description

General part information

CSD17571Q2 Series

This 30 V, 20 mΩ, SON 2×2 NexFET™ power MOSFET is designed to minimize losses in power conversion and load management applications, while offering excellent thermal performance for the size of the package.

This 30 V, 20 mΩ, SON 2×2 NexFET™ power MOSFET is designed to minimize losses in power conversion and load management applications, while offering excellent thermal performance for the size of the package.