Discrete Semiconductor Products

STF5N62K3

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 4.2 A, 620 V, 1.28 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES

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Discrete Semiconductor Products

STF5N62K3

Active

STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 4.2 A, 620 V, 1.28 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF5N62K3

Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Input Capacitance (Ciss) (Max) @ Vds	680 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STF5N62 Series

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	FET Type	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STF5N62K3	4.2 A	10 V	1.6 Ohm	25 W	TO-220-3 Full Pack	Through Hole	150 °C	-55 °C	30 V	N-Channel	TO-220FP	MOSFET (Metal Oxide)	620 V	680 pF	4.5 V	26 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.08
	Tube	50	$ 1.91
		100	$ 1.57
		250	$ 1.53
		500	$ 1.33
		1250	$ 1.13
		2500	$ 1.07
		5000	$ 1.03
Newark	Each	1	$ 2.66
		10	$ 1.58
		100	$ 1.50
		500	$ 1.36
		1000	$ 1.32
		2500	$ 1.22
		10000	$ 1.17

Description

General part information

STF5N62 Series

These devices are made using the SuperMESH3 Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.100% avalanche testedExtremely large avalanche performanceGate charge minimizedVery low intrinsic capacitanceImproved diode reverse recovery characteristicsZener-protected

Documents

Technical documentation and resources